13003 pinout. The main parameters of the transistor MJE13003 bipolar low-frequency NPN. Collective mind. Extras for MJE13003 transistor
This page shows existing reference information about the parameters of the bipolar low-frequency NPN transistor MJE13003. Detailed information on parameters, scheme and base, characteristics, sale places and manufacturers. Analogs of this transistor can be viewed on a separate page.
The original semiconductor material, on the basis of which the transistor is made: silicon (Si)
Semiconductor Transition Structure: NPN
Manufacturer: Motorola.
Scope of application: Medium Power, High Voltage, General Purpose
Popularity: 61513.
The conventions are described on the "Theory page" page.
MJE13003 transistor schemes
Contact designation:
International: C - collector, B - base, E - Emitter.
Russian: K - collector, b - base, e - emitter.
Collective mind. Additions for the MJE13003 transistor.
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T Ranzistors Silicon structures N-P-N, high-voltage amplifying. The production of transistors 13001 is localized in the countries of Southeast Asia and India. Used in low-power pulsed power blocks, chargers for various mobile phones, tablets, etc.
Attention!With close (almost ideal) general parameters Different manufacturerstransistors 13001 can differ.
Available in plastic Cases TO-92, with flexible conclusions and TO-126 with rigid. The type of device is indicated on the housing.
The figure below is the MJE13001 and 13001 of different manufacturers, with different buildings.
The most important parameters.
Current transmission coefficient 13001 may be from 10
before 70
, depending on the letter.
MJE13001A - from 10
before 15
.
MJE13001B - from 15
before 20
.
MJE13001C - from 20
before 25
.
MJE13001D - from 25
before 30
.
MJE13001E - from 30
before 35
.
MJE13001F - from 35
before 40
.
MJE13001G - from 40
before 45
.
MJE13001H - from 45
before 50
.
MJE13001I - from 50
before 55
.
MJE13001J - from 55
before 60
.
MJE13001K - from 60
before 65
.
MJE13001L - from 65
before 70
.
Current border frequency
- 8
MHz.
Maximum voltage collector - Emitter - 400 in.
Maximum collector current (permanent) -
200
Ma
Saturation voltage collector-emitter with a current collector 50mA, the base is 10mA - 0,5 in.
Saturation Voltage Base Emitter at the current collector 50mA, the base is 10mA - not higher 1,2
in.
Scattered power collector - in the TO-92 housing - 0.75 W, in the building TO-126 - 1.2 WT without radiator.
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This page shows existing reference information about the parameters of the bipolar low-frequency NPN transistor MJE13003. Detailed information on parameters, scheme and base, characteristics, sale places and manufacturers. Analogs of this transistor can be viewed on a separate page.
The original semiconductor material, on the basis of which the transistor is made: silicon (Si)
Semiconductor Transition Structure: NPN
Manufacturer: Motorola.
Scope of application: Medium Power, High Voltage, General Purpose
Popularity: 61514.
The conventions are described on the "Theory page" page.
MJE13003 transistor schemes
Contact designation:
International: C - collector, B - base, E - Emitter.
Russian: K - collector, b - base, e - emitter.
Collective mind. Additions for the MJE13003 transistor.
You know more about the MJE13003 transistor, what is written in the directory? Share your data with other users of the site.
Other directory sections:
There is hope that the transistor directory will be useful to experienced and beginner radio amateurs, designers and students. To all those who are somehow faced with the need to learn more about the parameters of the transistors. For more information on all the features of this Internet directory, you can read on the site page.
If you notice a mistake, a huge request.
Thanks for patience and cooperation.