Powerful battery charger - diagram. CT827 transistors and CT973 CT 827 schemes

T Ranzistors KT827 (2T827) - Silicon, powerful, low-frequency, composite (Darlington scheme), structures - N-P-N.
Case metal-raised (TO-3) or plastic.
Marking alphabetically digital, on the front surface of the case. The figure below is the marking and CT827 base.

The most important parameters.

Current transmission coefficient
- OT 750 before 18000 with typical meaning - 6000 .

2 in.

Saturation Voltage Base Emitter at a current collector 10a, the base is 40mA - no more 3 in.

Current border frequency. - 4 MHz.

Maximum voltage collector - Emitter.
In transistors KT827A, 2T827A - 100 in.
In transistors KT827B, 2T827B - 80 in.

Maximum collector current (permanent) - 20 A, impulse - 40 BUT.

Scattered power collector - 125 T.

Capacity collector transition at a voltage collector-base 10 V at a frequency of 100 kHz - no more 400 pF.

Foreign analogues of CT827 transistors.

CT827A - 2N6059, 2N6284.
KT827B - 2N6058.
CT827B - 2N6057

CT973 transistors

CT973 transistors are powerful, high-frequency, silicon, composite, structure - p-n-p. Case plastic TO-126.
Marking or alphanumeric is digital or - coded, on the front of the case. The figure below is the CT973 CT973 marking.

The most important parameters.

Current transmission coefficient - over 750 .

Maximum allowable voltage collector-emitter:
In transistors Kt973a - - - 60 in.
In transistors KT973B - - - 45 in.

Current transmission coefficient - OT 750 .

Maximum d.C. Collector - 4 BUT.

Reverse Talk of Collector at a voltage collector-emitter 60 V:
CT973A transistors, CT973B - 1
In KT973B transistors, at a voltage, the emitter 45V collector - 1 Ma, at ambient temperature + 25 Celsius.

Saturation voltage collector-emitter at a current collector 500mA, the base is 50mA - no more 1,5 in.

Another design is powerful charger For acidic accumulators of high tank. This device can successfully charge car batteries With a capacity of up to 120 amps. Output voltage charger You can adjust from 0 to 24 volts. Scheme It differs from the analogues by a small number of components in the strapping and practically does not need additional configuration.

Powerful charger For batteries - scheme

Power part - a powerful composite transistor of domestic production of the KT827 series, the output voltage is controlled by a variable resistor R2. The output current of the charging scheme depends on the type and power of the transformer used.

The transformer itself is easy enough to find in the sources uninterrupted powerAs the right, the minimum power of such transformers is at least 200 watts, and in some, more powerful uninterrupted rooms, up to 1000 watts. The transformer has three main outputs. The winding itself (which in the uninterrupted player plays the role of the primary winding) Here we will have down, that is, secondary. The transformer is a conventional downhole network transformer, with this mode of operation at the outputs of the secondary winding, an alternating voltage is formed with a rating of 24 volts 8-15 amps, depending on the power of the transformer.

Average transformer output - Highlight from the middle, we will not use it. Two extreme winding outputs are connected to charging scheme.

It is possible to need forced cooling of the scheme. To do this, you can use a cooler from computer power supplies, it is desirable to cooler from a separate voltage of 12 volts, for example, you can use the middle point of our winding and one of the ends, straighten the voltage by the usual bridge and serve on the cooler.

Regards - Aka Kasyan

Hello dear readers. There are many schemes where wonderful powerful composite CT827 transistors are used with great success and naturally sometimes needed to be replaced. The code under the hand of these transistors is not detected, then we begin to think about their possible analogues.

I did not find complete analogues among foreign production products, although there are many offers and statements on the replacement of these transistors on TIP142 on the Internet. But these transistors have a maximum collector current equal to 10a, in 827 it is equal to 20a, although their power is the same and equal to 125W. In 827, the maximum saturation voltage collector - the emitter is two volts, in TIP142 - 3B, which means that in a pulsed mode, when the transistor is in saturation, with a current of the collector 10a on our transistor, the power 20W will be highlighted, and in Burzhuy - 30W Therefore, it will have to increase the size of the radiator.

A good replacement can be the CT8105A transistor, we look at the tablet. When the collector current is current, the saturation voltage in this transistor is no more than 2B. It's good.

If all these replacements, I always collect an approximate analogue on discrete elements. Schemes of transistors and their species are shown in photo 1.

Collect usually mounted installation, one of possible options Shown in photo 2.

Depending on the desired parameters of the composite transistor, you can select transistors for replacement. The diagram shows D223A diodes, I usually apply CD521 or CD522.

In the photo 3, the collected composite transistor operates at a load at a temperature of 90 degrees. The current through the transistor in this case is 4a, and the voltage drop on it is 5 volts, which corresponds to the high-powered thermal power 20W. Usually such a procedure I arrange semiconductors within two, three hours. For silicon, it is not terrible. Of course, for the operation of such a transistor on this radiator inside the device case, an additional blowing will be required.

To select transistors, give a table with parameters.

General

Bipolar CT827A transistors (composite), KT945A and KT8111A (composite) are intended for use in output cascades of power amplifiers, current and voltage stabilizers, in PWM transducers and electric drive control circuits.

Legend structure

KTHHA:
CT - transistor silicon bipolar;
X - designation of the destination of the transistor
(8 - big power with a boundary frequency of 3 to 30 MHz;
9 - high power with a boundary frequency from 30 to 300 MHz);
X is the sequence number of development (27; 45; 111);
A - classification group by parameters.

Operating conditions

Conditions for operation of the CT827A transistor in accordance with the requirements of AAO.336.356 Tu-95, CT945A transistor - AAO.336.256TU-95, transistor KT8111A - ADBK.432.150.201.200.20 Environmental temperature from minus 60 to 100 ° C. The temperature of the transistor body from minus 45 to 100 ° C. AAO.336.356 TU-95; AAO.336.256 Tu-95; ADBK.432.150.201 TU-95

Specifications

The maximum permissible values \u200b\u200bof the transistor parameters are shown in Table. 1, static and dynamic characteristics - in Table. 2.

Table 1

table 2

General view, overall and connecting dimensions of CT827A and CT945A transistors in the CT-9 case (TO-3) are presented in Fig. 1, CT8111A transistor - in the CT-43 housing (TO-218) - in Fig. 2, electrical circuits transistors - in fig. 3, a, b.

General view, overall and connecting sizes of CT827A and CT945A transistors in the CT-9 case: 1 - base;
2 - collector;
3 - Emitter

General view, overall and connecting dimensions of the CT8111 transistor in the CT-43 housing: 1-3 - in fig. one

Electrical diagram of transistors: A - KT827A and KT8111A: VT1, VT2 - transistors;
VD1 - damper diode;
R1 is a comprehensive resistor 10 com;
R2 is a consistent resistor 100 ohms;
1-3 - in fig. one;
b - KT945A: VT1 - transistor;
1-3 - in fig. 1 Mass of KT827A and CT945A transistors not more than 20 g, CT8111A transistor - no more than 5 g. Reliability indicators: the minimum time of operation of 15,000 h;
the intensity of failures during the time of operations is not more than 10 - 6 1 / h;
the minimum 99.5% period of continuation of transistors is 10 years.

The package includes: transistors, label (passport) with brief technical data of transistors, consumer packaging. Typical number of transistors per unit container 100 pcs.